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SHINE: Swiss Hybrid Inverter

An efficient and cost-effective X-Hybrid inverter for EV is realized by combining Silicon-Carbide (SiC) and Silicon (Si) devices. The semiconductor devices design is optimized for cars with different power range and advanced diagnostics solutions will be provided for a maximal converter reliability.


One of the twenty-first century most pressing challenges is an alternative, clean, efficient and reliable urban transport system. Electric vehicles, equipped with artificial intelligence, advanced control and communications, can improve energy efficiency, safety and reliability as well as cost effectiveness. The scope of the project is to address the energy challenge for the automotive sector by enabling reduction of CO2 emission, improving the efficiency and reliability of a wide range of EV/HEV at a contained cost to enable the adoption of EV on a large scale. Within this vision, we focus our research towards developing one of the next generation power electronics converters for transportation: a Si IGBT/SiC MOSFET cross hybrid Switch inverter.


Figure 1. An holistic system level concept from the physical semiconductors to their operation and diagnostics


  • Realize design rules for the hybrid inverter based on requirements for a large spectrum of EV spanning several power ranges.
  • Develop controllers for the optimal operation of the hybrid converter.
  • Develop simulation platforms to enable performance optimization and failure mechanism understanding of the power electronic hybrid inverter system.
  • Develop in-situ and ex-situ digitalized fault detection methodologies to enhance safety and reliability of the power electronic system.


  • Modular simulation platforms of the power train, from devices to system level.
  • Digitalized power electronics diagnostic system.
  • Control rules for the hybrid inverter.
  • 1200 V XS-cross hybrid inverter prototype.

Figure 2. Computer control interface showing the different operation possibilities and power/temperature cycling equipment.


Figure 3. Hybrid switch and its output characteristics  ( Ref M. Rahimo et al., "Characterization of a Silicon IGBT and Silicon Carbide MOSFET Cross-Switch Hybrid," in IEEE Transactions on Power Electronics, vol. 30, no. 9, pp. 4638-4642, Sept. 2015, doi: 10.1109/TPEL.2015.2402595.)

Figure 4: Preliminary results: efficiency improvement at lower cost

Project information




FHNW Institute of Electric Power Systems


4 years


Swiss Federal Office of Energy

Project team

Prof. Dr. Renato Minamisawa, Prof Dr. Silvia Mastellone, Tanya Koottungal